In this research, SCAPS-1D software was used to analyze CdTe-based thin-film solar cells. In the first step, a solar cell with FTO/TiO2/CdS/CdTe configuration was employed as a reference cell. The CdSeXTe1-X layer was then inserted after the buffer layer instead of the traditional CdTe absorber layer to increase efficiency. The result is a modified cell with a FTO/TiO2/CdS/CdSeXTe1-X structure formed. The main purpose was to evaluate the key role of the CdSeXTe1-X film on the performance of the modified cell. The bandgap energy of the p-CdSeXTe1-X layer varies from 1.39 to 1.7 eV depending on the X value. In numerical modeling, physical parameters such as thickness, bandgap energy, temperature, and metal work function have been altered. Finally, the optimized values of these parameters were obtained. The presence of the CdSeXTe1-X layer could have altered the corresponding photovoltaic parameters such as PCE from 17.90 to 22.76%, JSC from 22.93 to 27.43 mA/cm2, FF from 69.26 to 86.23% and VOC from 1.12 to 0.96 V compared to that of the reference cell. The CdSeXTe1-X layer may boost light absorption and generate more photogenerated electron– hole pairs, as well as facilitate charge carrier movement at the conduction and valance band locations, resulting in an increase in photovoltaic parameters.
