Boron nitride (BN) multi-layers are proposed as dielectric material for both horizontal and vertical graphene nanoribbon interconnects. The layer number dependence of the out-of-plane dielectric constant of BN multi-layers is utilized to simultaneously reduce the interlayer dielectric thickness and the crosstalk delay at 7 nm CMOS technology node. Since crosstalk effects are manifested more strongly in denser interconnects, the proposed all-two-dimensional- materials-based interconnection schemes are compared with Cu/ low-k technology in terms of crosstalk delay. Results show that by reducing the interlayer dielectric thickness from 20 nm to 2 nm, the crosstalk delay ratio of the horizontal and vertical graphene nanoribbon interconnects to the Cu/pSiCOH counterparts decreases by 27.06% and 12.86%, respectively. It is also shown that as the interconnect length increases, both horizontal and vertical graphene nanoribbon interconnects with the BN dielectric prove more advantageous than the Cu/low-k counterparts.
