In this paper, the electrical characteristics of tunneling transistors based on vertical graphene and hexagonal boroncarbon- nitrogen (hBCN) heterostructure are studied and compared theoretically. We have considered three different types of hBCN, i.e, BC2N, BC2N0, and BC6N as a tunneling barrier. Our simulation is based on nonequilibrium Green’s function formalism along with an atomistic tight-binding(TB)model. The TB parameters are obtained by fitting the bandstructure to first-principle results. By using this method, electrical characteristics of the device, such as ION=IOFF ratio, subthreshold swing, and intrinsic gate-delay time are investigated. For a fair comparison, the effects of geometrical variations and number of tunneling barrier layers on the electrical parameters of the device are simulated and investigated. We show that by appropriate design, the device can be used for low-power or high-performance applications. The device, allows current modulation exceeding 106 at room temperature for 0.6V bias voltage.
