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Majid Sanaeepur

Majid Sanaeepur

Academic rank: Assistant Professor
ORCID: https://orcid.org/0000-0001-8818-2897
Education: PhD.
ScopusId: 35796193100
Faculty: Engineering
Address: Arak University
Phone: 086-32625628

Research

Title
Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions
Type
JournalPaper
Keywords
AGNR/ABNNR heterojunction, armchair boron nitride nanoribbon (ABNNR), armchair graphene nanoribbon (AGNR), negative differential resistance (NDR), nonequilibrium Green’s function (NEGF), resonant tunneling diode (RTD), substitutional defects
Year
2020
Journal BEILSTEIN J NANOTECH
DOI
Researchers Majid Sanaeepur

Abstract

A nanometer-scaled resonant tunneling diode based on lateral heterojunctions of armchair graphene and boron nitride nanoribbons, exhibiting negative differential resistance is proposed. Low-bandgap armchair graphene nanoribbons and high-bandgap armchair boron nitride nanoribbons are used to design the well and the barrier region, respectively. The effect of all possible substitutional defects (including BC, NC, CB, and CN) at the interface of graphene and boron nitride nanoribbons on the negative differential resistance behavior of the proposed resonant tunneling diode is investigated. Transport simulations are carried out in the framework of tight-binding Hamiltonians and non-equilibrium Green’s functions. The results show that a single substitutional defect at the interface of armchair graphene and boron nitride nanoribbons can dramatically affect the negative differential resistance behavior depending on its type and location in the structure.